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Focused-ion-beam implantation of Ga in elemental and compound semiconductors

Identifieur interne : 01BE24 ( Main/Repository ); précédent : 01BE23; suivant : 01BE25

Focused-ion-beam implantation of Ga in elemental and compound semiconductors

Auteurs : RBID : Pascal:95-0122854

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Etude théorique, 6172T, 7920N, Silicium, Germanium, Indium phosphure, Antimoine composé, Zinc séléniure, Implantation ion, Gallium ion, Domaine énergie 10-100 keV, Simulation ordinateur, Spectrométrie masse, Pulvérisation irradiation, Collision ion atome.

English descriptors

KwdEn :
- Antimony compounds, Computerized simulation, Experimental study, Gallium ions, Germanium, Indium phosphides, Ion implantation, Ion-atom collisions, Mass spectroscopy, Silicon, Sputtering, Theoretical study, Zinc selenides, keV range 10-100.

Abstract

Small-area [∼(50 μm)²], focused-ion-beam implantation of 25 keV Ga⁺ in Si, Ge, InP, InSb, and ZnSe was investigated by experiments and by computer simulations. Specifically, the Ga concentration was determined for implantation fluences ϕ ranging from 1×10¹⁴ to 3×10¹⁷ Ga⁺ ions/cm² by means of secondary-ion mass spectrometry. In all materials the Ga peak concentration exhibits an essentially linear increase with fluence up to some 10¹⁶ cm^-2; for higher values of ϕ the Ga concentration tends to saturate. The saturation content of Ga at the surface c∞ ranges from ∼2 at % for ZnSe to ∼40 at % for Si. These values appear roughly inversely correlated with the specimens' sputtering yields and agree thus with the predictions of a model of ion retention in the presence of concurrent sputter erosion. The computer simulations with the dynamic binary-collision-approximation code t-dyn produce a fluence-dependent evolution of the Ga concentrations in the examined semiconductors which is in qualitative agreement with the experiments. Furthermore, partial sputtering yields and the most probable ranges for 25 keV Ga⁺ impact on the different materials have been determined both experimentally and from the simulation output. © 1995 American Vacuum Society

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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Focused-ion-beam implantation of Ga in elemental and compound semiconductors</title>
<author><name sortKey="Gnaser, H" uniqKey="Gnaser H">H. Gnaser</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fachbereich Physik and Institut für Oberflächen- und Schichtanalytik, Universität Kaiserslautern, D-67663 Kaiserslautern, Germany</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Fachbereich Physik and Institut für Oberflächen- und Schichtanalytik, Universität Kaiserslautern, D-67663 Kaiserslautern</wicri:regionArea>
<placeName><region type="land" nuts="2">Rhénanie-Palatinat</region>
<settlement type="city">Kaiserslautern</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Kallmayer, C" uniqKey="Kallmayer C">C. Kallmayer</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fachbereich Physik and Institut für Oberflächen- und Schichtanalytik, Universität Kaiserslautern, D-67663 Kaiserslautern, Germany</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Fachbereich Physik and Institut für Oberflächen- und Schichtanalytik, Universität Kaiserslautern, D-67663 Kaiserslautern</wicri:regionArea>
<placeName><region type="land" nuts="2">Rhénanie-Palatinat</region>
<settlement type="city">Kaiserslautern</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Oechsner, H" uniqKey="Oechsner H">H. Oechsner</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fachbereich Physik and Institut für Oberflächen- und Schichtanalytik, Universität Kaiserslautern, D-67663 Kaiserslautern, Germany</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Fachbereich Physik and Institut für Oberflächen- und Schichtanalytik, Universität Kaiserslautern, D-67663 Kaiserslautern</wicri:regionArea>
<placeName><region type="land" nuts="2">Rhénanie-Palatinat</region>
<settlement type="city">Kaiserslautern</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">95-0122854</idno>
<date when="1995-01">1995-01</date>
<idno type="stanalyst">PASCAL 95-0122854 AIP</idno>
<idno type="RBID">Pascal:95-0122854</idno>
<idno type="wicri:Area/Main/Corpus">01D226</idno>
<idno type="wicri:Area/Main/Repository">01BE24</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0734-211X</idno>
<title level="j" type="abbreviated">J. Vac. Sci. Technol. B</title>
<title level="j" type="main">Journal of Vacuum Science and Technology B</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Antimony compounds</term>
<term>Computerized simulation</term>
<term>Experimental study</term>
<term>Gallium ions</term>
<term>Germanium</term>
<term>Indium phosphides</term>
<term>Ion implantation</term>
<term>Ion-atom collisions</term>
<term>Mass spectroscopy</term>
<term>Silicon</term>
<term>Sputtering</term>
<term>Theoretical study</term>
<term>Zinc selenides</term>
<term>keV range 10-100</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Etude théorique</term>
<term>6172T</term>
<term>7920N</term>
<term>Silicium</term>
<term>Germanium</term>
<term>Indium phosphure</term>
<term>Antimoine composé</term>
<term>Zinc séléniure</term>
<term>Implantation ion</term>
<term>Gallium ion</term>
<term>Domaine énergie 10-100 keV</term>
<term>Simulation ordinateur</term>
<term>Spectrométrie masse</term>
<term>Pulvérisation irradiation</term>
<term>Collision ion atome</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Small-area [∼(50 μm)<sup>2</sup>
], focused-ion-beam implantation of 25 keV Ga<sup>+</sup>
 in Si, Ge, InP, InSb, and ZnSe was investigated by experiments and by computer simulations. Specifically, the Ga concentration was determined for implantation fluences ϕ ranging from 1×10<sup>14</sup>
 to 3×10<sup>17</sup>
 Ga<sup>+</sup>
 ions/cm<sup>2</sup>
 by means of secondary-ion mass spectrometry. In all materials the Ga peak concentration exhibits an essentially linear increase with fluence up to some 10<sup>16</sup>
 cm<sup>-2</sup>
; for higher values of ϕ the Ga concentration tends to saturate. The saturation content of Ga at the surface c∞ ranges from ∼2 at % for ZnSe to ∼40 at % for Si. These values appear roughly inversely correlated with the specimens' sputtering yields and agree thus with the predictions of a model of ion retention in the presence of concurrent sputter erosion. The computer simulations with the dynamic binary-collision-approximation code t-dyn produce a fluence-dependent evolution of the Ga concentrations in the examined semiconductors which is in qualitative agreement with the experiments. Furthermore, partial sputtering yields and the most probable ranges for 25 keV Ga<sup>+</sup>
 impact on the different materials have been determined both experimentally and from the simulation output. © 1995 American Vacuum Society</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0734-211X</s0>
</fA01>
<fA02 i1="01"><s0>JVTBD9</s0>
</fA02>
<fA03 i2="1"><s0>J. Vac. Sci. Technol. B</s0>
</fA03>
<fA05><s2>13</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Focused-ion-beam implantation of Ga in elemental and compound semiconductors</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>GNASER (H.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>KALLMAYER (C.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>OECHSNER (H.)</s1>
</fA11>
<fA14 i1="01"><s1>Fachbereich Physik and Institut für Oberflächen- und Schichtanalytik, Universität Kaiserslautern, D-67663 Kaiserslautern, Germany</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>19-26</s1>
</fA20>
<fA21><s1>1995-01</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>11992B</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© AIP</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>95-0122854</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of Vacuum Science and Technology B</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Small-area [∼(50 μm)<sup>2</sup>
], focused-ion-beam implantation of 25 keV Ga<sup>+</sup>
 in Si, Ge, InP, InSb, and ZnSe was investigated by experiments and by computer simulations. Specifically, the Ga concentration was determined for implantation fluences ϕ ranging from 1×10<sup>14</sup>
 to 3×10<sup>17</sup>
 Ga<sup>+</sup>
 ions/cm<sup>2</sup>
 by means of secondary-ion mass spectrometry. In all materials the Ga peak concentration exhibits an essentially linear increase with fluence up to some 10<sup>16</sup>
 cm<sup>-2</sup>
; for higher values of ϕ the Ga concentration tends to saturate. The saturation content of Ga at the surface c∞ ranges from ∼2 at % for ZnSe to ∼40 at % for Si. These values appear roughly inversely correlated with the specimens' sputtering yields and agree thus with the predictions of a model of ion retention in the presence of concurrent sputter erosion. The computer simulations with the dynamic binary-collision-approximation code t-dyn produce a fluence-dependent evolution of the Ga concentrations in the examined semiconductors which is in qualitative agreement with the experiments. Furthermore, partial sputtering yields and the most probable ranges for 25 keV Ga<sup>+</sup>
 impact on the different materials have been determined both experimentally and from the simulation output. © 1995 American Vacuum Society</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60A72T</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70I20N</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Etude théorique</s0>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Theoretical study</s0>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>6172T</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>7920N</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Germanium</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Germanium</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Indium phosphure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Indium phosphides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Antimoine composé</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Antimony compounds</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Zinc séléniure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Zinc selenides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Implantation ion</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Ion implantation</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Gallium ion</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Gallium ions</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Domaine énergie 10-100 keV</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>keV range 10-100</s0>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Simulation ordinateur</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Computerized simulation</s0>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Spectrométrie masse</s0>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Mass spectroscopy</s0>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Pulvérisation irradiation</s0>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Sputtering</s0>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Collision ion atome</s0>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Ion-atom collisions</s0>
</fC03>
<fN21><s1>074</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>9503M0940</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

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Focused-ion-beam implantation of Ga in elemental and compound semiconductors

Focused-ion-beam implantation of Ga in elemental and compound semiconductors

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri